| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high frequency amplifier that implements an advantageously wide band of fundamental matching and an ideal second harmonic input matching condition. <P>SOLUTION: A fundamental matching microstrip transmission line 6 and a second harmonic matching open-ended stub 7 are formed on the same high dielectric constant substrate 5 and the microstrip transmission line 6 is connected to a gate electrode 1 via a wire 8, so that the wire 8 can be shortened to a minimum length to implement an advantageously wide band of fundamental matching. Alternatively, the microstrip transmission line 6 and the open-ended stub 7 are individually formed and are individually connected to the gate electrode 1 via wires 8, 9, so that an electrical length of the open-ended stub 7 can be selected for a second harmonic so as to form a short circuit point at a gate electrode end of a transistor in consideration of a reactance component of the wire 9 to implement an ideal second harmonic input matching condition. <P>COPYRIGHT: (C)2013,JPO&INPIT |
