| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a wafer processing method capable of highly accurately flattening a wafer by grinding it. <P>SOLUTION: A wafer processing method for thinning a wafer in which a plurality of devices are formed on a surface thereof by grinding a rear surface of the wafer comprises the steps of: forming a resin layer on the surface of the wafer; curing the resin layer formed by the resin layer formation step; exposing the resin layer formed on the surface of the wafer by holding the rear surface side of the wafer by a chuck table and flattening the resin layer after performing the resin layer curing step; sticking the resin layer side of the wafer onto a hard plate via an adhesive member after performing the resin layer flattening step; and holding the hard plate by the chuck table of a grinding device and thinning the wafer to a prescribed thickness by grinding the rear surface of the wafer by grinding means after performing the sticking step. <P>COPYRIGHT: (C)2013,JPO&INPIT |
