SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide semiconductor device which can tightly fix a support substrate.

SOLUTION: A manufacturing method of a silicon carbide semiconductor device 100 comprises the steps of: preparing a silicon carbide substrate 1 having a first principal surface 2 and a second principal surface 3; forming an ion implantation layer 4 at a predetermined depth from the first principal surface 2 of the silicon carbide substrate 1 by implantation of ion into the first principal surface 2; bonding via an intermediate layer 6, the silicon carbide substrate 1 and a support substrate 7 composed of a silicon carbide; removing a second layer 9 by separating the silicon carbide substrate 1 with sandwiching the ion implantation layer 4 into a first layer 8 bonded to the support substrate 7 via the intermediate layer 6 and the second layer 9 having the second principal surface 3; forming a silicon carbide layer 12 on the first layer 8; and removing the support substrate 7.

COPYRIGHT: (C)2013,JPO&INPIT