| 摘要 |
A method for forming a semiconductor device includes providing in a process chamber a metal-containing gate electrode film on a substrate, flowing a process gas consisting of hydrogen (H2) and optionally a noble gas into the process chamber, forming plasma excited species from the process gas by a microwave plasma source, and exposing the metal-containing gate electrode film to the plasma excited species to form a modified metal-containing gate electrode film having a lower work function than the metal-containing gate electrode film. Other embodiments describe forming semiconductor devices with gate stacks containing modified metal-containing gate electrodes for NMOS and PMOS transistors. |
