| 摘要 |
Disclosed is a semiconductor device in which an n-channel type first thin film transistor and a p-channel type second thin film transistor are provided on the same substrate. The first thin film transistor has a first semiconductor layer (11), and the second thin film transistor has a second semiconductor layer (20), a third semiconductor layer (21), and a fourth semiconductor layer (22). The first semiconductor layer (11), the second semiconductor layer (20), the third semiconductor layer (21) and the fourth semiconductor layer (22) are formed of the same film, and the first and second semiconductor layers (11, 20) respectively have slanted portions (11e, 20e) positioned at respective peripheries, and main portions (11m, 20m) made of portions other than the slanted portions. A p-type impurity is implanted into the slanted portion (11e) of the first semiconductor layer at a concentration higher than that in the main portion (11m) of the first semiconductor layer and that in the main portion (20m) of the second semiconductor layer. |
