| 摘要 |
PURPOSE: A multilayer thin film deposition device is provided to improve or maximize productivity as process chambers can perform a continuous deposition process of a first oxide, metal, and a second oxide. CONSTITUTION: A multilayer thin film deposition device comprises a plurality of process chambers(300), vacuum pumps(400), and an oxygen supply units(501,502). The plurality of process chambers include a first process chamber, a second process chamber, and a third process chamber which are connected in a row between a loading chamber and a unloading chamber for performing a continuous deposition process with respect to work pieces of a first oxide, metal, and a second oxide. The vacuum pumps include a first pump, a second pump, and a third pump. The first pump is commonly connected to the loading chamber and the first process chamber for providing vacuum pressure lower than normal pressure from the loading chamber to the unloading chamber. The second pump is independently connected to the second process chamber. The third pump is commonly connected to the unloading chamber and the third processing chamber. The oxygen supply units supply oxygen to the first and third process chambers.
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