发明名称 PATTERNED IMPLANT OF A DIELECTRIC LAYER
摘要 At least part of a dielectric layer is implanted to form implanted regions. The implanted regions affect the etch rate of the dielectric layer during the formation of the openings through the dielectric layer. Metal contacts may be formed within these openings. The dielectric layer, which may be SiO2 or other materials, may be part of a solar cell or other device.
申请公布号 US2013143353(A1) 申请公布日期 2013.06.06
申请号 US201113310318 申请日期 2011.12.02
申请人 RAMAPPA DEEPAK;VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 RAMAPPA DEEPAK
分类号 H01L31/18 主分类号 H01L31/18
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