发明名称 METHOD CONTROLLING DEEP POWER DOWN MODE IN MULTI-PORT SEMICONDUCTOR MEMORY
摘要 Disclosed is a method of controlling a deep power down mode in a multi-port semiconductor memory having a plurality of ports connected to a plurality of processors. Control of the deep power down mode in the multi-port semiconductor memory is performed such that activation/deactivation of the deep power down mode are determined in accordance with signals applied through various ports in the plurality of ports.
申请公布号 US2013142000(A1) 申请公布日期 2013.06.06
申请号 US201313754950 申请日期 2013.01.31
申请人 SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE HO-CHEOL;LEE JUNG-BAE
分类号 G11C5/14 主分类号 G11C5/14
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