| 摘要 |
It is possible to achieve compatibility between suppressing dark current caused by a leak phenomenon and ensuring element reliability in a CMOS solid-state imaging device. When a pixel using electrons as signal charge is driven, the negative voltage level of each of control signals adapted to pulse-drive transistors in the pixel is adjusted so that the longer the charge accumulation time, the higher the voltage level. Preferably, the negative voltage level is grounded (GND) when no signal charge is accumulated. The negative voltage level is increased only when the charge accumulation time is long, which is the case where dark current caused by a leak phenomenon becomes a problem. Therefore, it is possible to suppress stress on the pixels and the gate oxide film of their drive circuits and degradation of the transistor characteristics even if dark current is suppressed.
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