SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor memory device and a method for fabricating the same are provided to secure stable current paths by stably connecting a lower channel to an upper channel. CONSTITUTION: A gate is laminated on a substrate. A vertical channel includes an upper channel(142) and a lower channel(141). The upper channel and the lower channel are electrically connected to the substrate. An information storage layer(151,152) is arranged between the vertical channel and the gate. The upper channel includes a vertical pattern and a horizontal pattern.