发明名称 METHOD OF MANUFACTURING AN ORGANIC THIN FILM TRANSISTOR
摘要 There is provided a method of manufacturing an organic thin film transistor. The method includes forming a plurality of barrier ribs on an insulating substrate and forming a plurality of grooves partitioned by the barrier ribs. The method further includes forming a source electrode, a drain electrode, and a gate electrode on the grooves, respectively. The method also includes forming an opening by etching the barrier ribs between the source electrode and the gate electrode and between the gate electrode and the drain electrode. The method further includes forming a gate insulating film on the opening; and forming an organic semiconductor layer on the gate insulating film.
申请公布号 US2013137212(A1) 申请公布日期 2013.05.30
申请号 US201213723004 申请日期 2012.12.20
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD.;COPORATE COLLABORATION SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR;SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION;SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 HA SANG WON;CHUNG LL SUB;HEO JIN HEE;KIM KYO HYEOK;KWON JUNG MIN;EUM KYU HAG;YIM SANG LL;RYU CHANG SUP
分类号 H01L51/00 主分类号 H01L51/00
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