| 摘要 |
A method for manufacturing a semiconductor device has the following steps. A substrate having a silicon carbide layer of a first conductivity type is prepared. On the silicon carbide layer, a mask layer is formed. By ion implantation from above the mask layer, a well region of a second conductivity type is formed on the silicon carbide layer. At the step of forming the mask layer, the mask layer having an opening with a taper angle, which is an angle formed between a bottom surface and an inclined surface of mask layer, being larger than 60° and not larger than 80° is formed. Thus, a method of manufacturing a semiconductor device, capable of producing a semiconductor device having high degree of integration and high breakdown voltage, can be provided.
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