发明名称 EVALUATION OF ETCH MASK FILM
摘要 PURPOSE: A method for evaluating an etching mask layer is provided to obtain the etching mask layer with high etching performance by evaluating an etching resistance in etching a pattern forming layer and an etchability in etching the etch mask layer. CONSTITUTION: A chamber(1) provides a processing space and receives a substrate(5). A first radio frequency power source is connected to a bottom electrode(3). A second radio frequency power source is connected to an antenna coil(4). A ground(2) maintains the potential of the chamber with 0 by connecting the chamber to the ground.
申请公布号 KR20130055529(A) 申请公布日期 2013.05.28
申请号 KR20120129863 申请日期 2012.11.16
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 IGARASHI SHINICHI;YOSHIKAWA HIROKI;INAZUKI YUKIO;KANEKO HIDEO
分类号 H01L21/027;G03F1/44;H01L21/66 主分类号 H01L21/027
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