发明名称 |
EVALUATION OF ETCH MASK FILM |
摘要 |
PURPOSE: A method for evaluating an etching mask layer is provided to obtain the etching mask layer with high etching performance by evaluating an etching resistance in etching a pattern forming layer and an etchability in etching the etch mask layer. CONSTITUTION: A chamber(1) provides a processing space and receives a substrate(5). A first radio frequency power source is connected to a bottom electrode(3). A second radio frequency power source is connected to an antenna coil(4). A ground(2) maintains the potential of the chamber with 0 by connecting the chamber to the ground. |
申请公布号 |
KR20130055529(A) |
申请公布日期 |
2013.05.28 |
申请号 |
KR20120129863 |
申请日期 |
2012.11.16 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
IGARASHI SHINICHI;YOSHIKAWA HIROKI;INAZUKI YUKIO;KANEKO HIDEO |
分类号 |
H01L21/027;G03F1/44;H01L21/66 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|