| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves a high withstanding voltage by inhibiting local concentration of an electric field. <P>SOLUTION: A semiconductor device comprises: a source region 110 facing a second face 32 of lateral faces of the groove 300 and having a part extending in a direction parallel with an intersection of a face 31 and the face 32; a drift region 140 facing a face 33 of the groove which is opposite to the face 32 and having a part extending in a direction parallel with an intersection of the face 31 and the face 33, and formed to have a concentration lower than that of the source region 110; a drain region 120 positioned on the side opposite to the groove 300 with respect to the drift region 140 and provided to contact the drift region 140 and formed to have a concentration higher than that of the drift region 140; a first gate insulation layer 200 contacting a face 34 that is a face in a direction to intersect the face 32 and the face 33 among the lateral faces of the groove 300, and contacting the face 31 in at least the channel regions 130; and a gate electrode 400 provided on the first gate insulation layer 200. The groove 300 is deeper than the drift region 140. <P>COPYRIGHT: (C)2013,JPO&INPIT |
