| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element that is provided on a semipolar plane and has a suppressed increase in a bias voltage required for light emission, and to provide a method of manufacturing the nitride semiconductor light-emitting element. <P>SOLUTION: A multiquantum well structure of a light-emitting layer 17, which is provided above a supporting substrate composed of a hexagonal nitride semiconductor having a primary surface 13a of a semipolar plane, is composed of a well layer 17a, a well layer 17c, and a barrier layer 17b. The barrier layer 17b is provided between the well layer 17a and the well layer 17c. The well layer 17a and the well layer 17c are composed of InGaN and have an indium composition ranging from 0.15 or more to 0.50 or less. A tilt angle α of the primary surface 13a with respect to the c-plane of the hexagonal nitride semiconductor is within any one of ranges from 50 or more to 80 degrees or less and from 130 or more to 170 degrees or less. A film thickness L of the barrier layer 17b ranges from 1.0 or more to 4.5 nm or less. <P>COPYRIGHT: (C)2013,JPO&INPIT |
