| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a leakage magnetic field applied to a storage layer. <P>SOLUTION: A magnetic storage element 10 comprises: a storage layer 11 having magnetic anisotropy vertical to a film surface and having a variable magnetization direction; a non-magnetic layer 12 provided on the storage layer 11; a reference layer 13 provided on the non-magnetic layer 12 and having magnetic anisotropy vertical to the film surface and having an invariable magnetization direction; a non-magnetic layer 14 provided on the reference layer 13; and an adjustment layer 15 provided on the non-magnetic layer 14 and reducing a leakage magnetic field from the reference layer 13. The adjustment layer 15 is formed of an interface layer 16 and a magnetic layer 17 laid on the interface layer 16 and having magnetic anisotropy vertical to the film surface. Saturation magnetization of the interface layer 16 is larger than the saturation magnetization of the magnetic layer 17. <P>COPYRIGHT: (C)2013,JPO&INPIT |
