SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE PACKAGING STRUCTURE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE PACKAGING STRUCTURE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can achieve high connection reliability by simple means even when external connection electrodes are narrow-pitched.

SOLUTION: In a semiconductor device, an external connection electrode is included. The external connection electrode comprises: a metal layer 12 formed on a semiconductor substrate; an insulation layer 13 which is formed so as to abut on the metal layer 12 and also has an opening 13a through which part of the metal layer 12 is exposed; and a barrier metal layer 14 which is formed so as to electrically connect to the metal layer 12 exposed through the opening 13a of the insulation layer 13. The barrier metal layer 14 has a radius of curvature in portions of a line segment which is formed by a plane perpendicular to the insulation layer 13 and the surface of the barrier metal layer 14 intersecting each other, the portions corresponding to regions around the opening 13a of the insulation layer 13.

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