| 摘要 |
In one embodiment, the memory device includes a memory cell array having at least a first memory cell group, a second memory cell group and a redundancy memory cell group. The first memory cell group includes a plurality of first memory cells associated with a first data line, the second memory cell group includes a plurality of second memory cells associated with a second data line, and the redundancy memory cell group includes a plurality of redundancy memory cells associated with a redundancy data line. A data line selection circuit is configured to provide a data path between an input/output node and one of the first data line, the second data and the redundancy data line.
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