HIGH EMISSIVITY DISTRIBUTION PLATE IN VAPOR DEPOSITION APPARATUS AND PROCESSES

摘要

Apparatus and processes for vapor deposition of a sublimated source material as a thin film on a substrate are provided. The apparatus can include a deposition head; a receptacle disposed in the deposition head and configured for receipt of a source material; a heated distribution manifold disposed below the receptacle and configured to heat the receptacle to a degree sufficient to sublimate the source material within the receptacle; and, a deposition plate disposed below the distribution manifold and at a defined distance above a horizontal conveyance plane of an upper surface of a substrate conveyed through the apparatus. The distribution plate can define a pattern of passages therethrough that further distribute the sublimated source material passing through the distribution manifold. The distribution plate can have an emissivity in a range of about 0.7 to a theoretical maximum of 1.0 at a plate temperature during deposition.