| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon-on-insulator structure with a thickness of 25 nm or less and having a buried oxide layer with few bubble defect. <P>SOLUTION: A method for manufacturing a silicon-on-insulator structure comprises the steps for: (a) providing a supporting substrate and a donor substrate containing a silicon layer, only one of both substrates is covered by an oxide layer; (b) forming a weak zone to be a boundary between the silicon layer and the donor substrate; (c) plasma-activating the oxide layer; (d) bonding the donor substrate to the supporting substrate, and the oxide layer is arranged on the bonding boundary and the bonding is performed in a partial vacuum; (e) performing a bonding-reinforcing anneal at 350°C or less, and the anneal cleaves the donor substrate along the weak zone; and (f) heat-treating the silicon-on-insulator structure at a temperature higher than 900°C to repair defects, and a temperature transition from the step (e) to the step (f) is a gradient ratio of more than 10°C/s. <P>COPYRIGHT: (C)2013,JPO&INPIT |
