发明名称 |
Resistive memory device and method of manufacturing the same |
摘要 |
Provided is a resistive memory device and a method of manufacturing the resistive memory device that includes a bottom electrode, an insulating layer that is formed on the bottom electrode and has a hole that exposes the bottom electrode, a resistance layer and an intermediate layer which are formed in the hole, a switch structure formed on a surface of the intermediate layer, and an upper electrode formed on the switch structure.
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申请公布号 |
US8426837(B2) |
申请公布日期 |
2013.04.23 |
申请号 |
US20080073666 |
申请日期 |
2008.03.07 |
申请人 |
LEE MYOUNG-JAE;PARK YOUNG-SOO;LEE JUNG-HYUN;HWANG SOON-WON;CHUNG SEOK-JAE;LEE CHANG-SOO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE MYOUNG-JAE;PARK YOUNG-SOO;LEE JUNG-HYUN;HWANG SOON-WON;CHUNG SEOK-JAE;LEE CHANG-SOO |
分类号 |
H01L29/02;H01L29/06;H01L47/00 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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