发明名称 MASK BLANK, TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a mask blank and a transfer mask for solving such a problem that a film stress of a thin film has a stronger tendency to become a compression stress with the elapse of time. <P>SOLUTION: In a mask blank in which a thin film is formed on a main surface of a glass substrate, the thin film is formed from a material which contains tantalum and is substantially free from hydrogen, and an invasion restraining film for restraining the invasion of the hydrogen into the thin film from the glass substrate is provided between the main surface of the glass substrate and the thin film. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013068934(A) 申请公布日期 2013.04.18
申请号 JP20120165471 申请日期 2012.07.26
申请人 HOYA CORP 发明人 SHISHIDO HIROAKI;NOZAWA JUN;KOMINATO ATSUSHI
分类号 G03F1/48;G03F1/50 主分类号 G03F1/48
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