CRYSTAL LAYERED STRUCTURE AND METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR ELEMENT

摘要

Provided is a crystal layered structure having a low dislocation density on the upper surface of a nitride semiconductor layer on a Ga2O3 substrate, and a method for manufacturing the same. In one embodiment, there is provided a crystal layered structure (1) including: a Ga2O3 substrate (2); a buffer layer (3) comprising an AlxGayInzN (0 <= x <= 1, 0 <= y <= 1, 0 <= z <= 1, x + y + z = 1) crystal on the Ga2O3 substrate (2); and a nitride semiconductor layer (4) comprising an AlxGayInzN (0 <= x <= 1, 0 <= y <= 1, 0 <= z <= 1, x + y + z = 1) crystal including oxygen as an impurity on the buffer layer (3). The oxygen concentration in a region (4a) having a thickness of no less than 200 nm on the nitride semiconductor layer (4) on the side towards the Ga2O3 substrate (2) is no less than 1.0 × 1018/cm3.