METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device including an MTJ(Magnetic Tunneling Junction) device is provided to improve the reliability of the MTJ device by removing conductive byproducts from the side of the MTJ device. CONSTITUTION: A plurality of layers(20) for comprising an MTJ device is formed. A ruthenium layer(24) is formed on the plurality of layers. A hard mask pattern is formed on the ruthenium layer to pattern the plurality of layers. The ruthenium layer which is not exposed by the hard mask pattern is volatilized with a peroxide process to have a volatile property. The MTJ device is formed by patterning the plurality of layers using the hard mask pattern as an etch mask.