NITRIDE SEMICONDUCTOR TEMPLATE AND LIGHT-EMITTING DIODE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor template having a low resistance (a surface resistivity of 20 Ω/sq. or less) and a good crystallinity (an XRD half value width of 50 seconds or more and 100 seconds or less), and to provide a light-emitting diode using the same.

SOLUTION: A nitride semiconductor template 10 has: a substrate 11; and a group-III nitride semiconductor layer 22 obtained by forming an O-doped GaN layer 13 on the substrate 11 as an O-additive layer to which O (oxygen) is added and forming an Si-doped GaN layer 14 on the O-doped GaN layer 13 as an Si-additive layer to which Si is added. A film thickness of the whole group-III nitride semiconductor layer is 4 μm or more and 10 μm or less. An average carrier concentration of Si in the Si-doped GaN layer 14 is 1×1018cm-3or more and 5×1018cm-3or less.

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