发明名称 |
COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer.</p> |
申请公布号 |
WO2013049042(A2) |
申请公布日期 |
2013.04.04 |
申请号 |
WO2012US57081 |
申请日期 |
2012.09.25 |
申请人 |
GLO AB |
发明人 |
SVENSSON, PATRIK;ROMANO, LINDA;YI, SUNGSOO;KRYLIOUK, OLGA;CHANG, YING-LAN |
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