发明名称 FLASH MEMORY DEVICE CAPABLE OF VERIFYING RELIABILITY USING BYPASS PATH, AND SYSTEM AND METHOD OF VERIFYING RELIABILITY USING THAT DEVICE
摘要 PURPOSE: A flash memory storage device capable of verifying reliability by using a bypass path, a system and a method for verifying the reliability of the flash memory storage device are provided to objectively verify the reliability of a completely developed result. CONSTITUTION: A controller(101) controls a flash memory chip. A first connector(102) is formed for a first path between the flash memory chip and the controller. A second connector(103) is formed for a second path between the controller and a test support system to test a flash memory storage device. The controller selectively activates the first path or the second path. [Reference numerals] (100) Flash memory storage device; (101) Controller; (104) Flash memory chip; (110) Test support system; (130) Host; (140) Host interface;
申请公布号 KR20130032151(A) 申请公布日期 2013.04.01
申请号 KR20110095882 申请日期 2011.09.22
申请人 SNU R&DB FOUNDATION 发明人 YOON, JIN HYUK;NAM, EYEE HYUN;MIN, SANG LYUL
分类号 G11C29/00;G11C16/02;G11C16/06 主分类号 G11C29/00
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