发明名称 |
REPLACEMENT GATE SEMICONDUCTOR DEVICE |
摘要 |
A method for fabricating a semiconductor device including providing a semiconductor substrate having a first opening and second opening. A dielectric layer is formed on the substrate. An etch stop layer on the dielectric layer in the first opening. Thereafter, a work function layer is formed on the etch stop layer and fill metal is provided on the work function layer to fill the first opening. |
申请公布号 |
US2013075827(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201113245581 |
申请日期 |
2011.09.26 |
申请人 |
LEE DA-YUAN;HSU KUANG-YUAN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,("TSMC") |
发明人 |
LEE DA-YUAN;HSU KUANG-YUAN |
分类号 |
H01L21/336;B82Y99/00;H01L21/28;H01L27/092 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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