发明名称 |
METHODS OF FORMING A METAL CONTAINING LAYER ON A SUBSTRATE WITH HIGH UNIFORMITY AND GOOD PROFILE CONTROL |
摘要 |
Methods for forming a metal containing layer onto a substrate with good deposition profile control and film uniformity across the substrate are provided. In one embodiment, a method of sputter depositing a metal containing layer on the substrate includes transferring a substrate in a processing chamber, supplying a gas mixture including at least Ne gas into the processing chamber, applying a RF power to form a plasma from the gas mixture, and depositing a metal containing layer onto the substrate in the presence of the plasma.
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申请公布号 |
US2013075246(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201213622769 |
申请日期 |
2012.09.19 |
申请人 |
GE ZHENBIN;RITCHIE ALAN;ALLEN ADOLPH MILLER;APPLIED MATERIALS, INC. |
发明人 |
GE ZHENBIN;RITCHIE ALAN;ALLEN ADOLPH MILLER |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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