发明名称 |
Nitride light emitting device of using substrate decomposition prevention layer and manufacturing method of the same |
摘要 |
A light-emitting device is provided with a substrate decomposition prevention layer using as a matrix at least one selected from the group consisting of boron nitride (B—N), silicon carbide (Si—C), and silicon carbon nitride (Si—C—N), and patterned into a predetermined shape; an n-type nitride clad layer formed on the substrate decomposition prevention layer; a nitride active layer formed on the n-type nitride clad layer; a p-type nitride clad layer formed on the nitride active layer; a p-type ohmic contact layer formed on the p-type nitride clad layer; a p-type electrode pad formed on the p-type ohmic contact layer; an n-type ohmic contact layer electrically connected to the n-type nitride clad layer by means of a patterned region of the substrate decomposition prevention layer; and an n-type electrode pad formed beneath the n-type ohmic contact layer. |
申请公布号 |
US8404505(B2) |
申请公布日期 |
2013.03.26 |
申请号 |
US201213344947 |
申请日期 |
2012.01.06 |
申请人 |
SONG JUNE O;SAMSUNG DISPLAY CO., LTD. |
发明人 |
SONG JUNE O |
分类号 |
H01L21/00;H01L33/12;H01L33/32;H01L33/42 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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