发明名称 |
Systems and methods for co-doping wide band gap materials |
摘要 |
Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction. |
申请公布号 |
US8394711(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US201113154000 |
申请日期 |
2011.06.06 |
申请人 |
PRELAS MARK A.;GHOS TUSHAR K.;TOMPSON, JR. ROBERT V.;VISWANATH DABIR S.;LOYALKA SUDARSHAN;THE CURATORS OF THE UNIVERSITY OF MISSOURI |
发明人 |
PRELAS MARK A.;GHOS TUSHAR K.;TOMPSON, JR. ROBERT V.;VISWANATH DABIR S.;LOYALKA SUDARSHAN |
分类号 |
H01L21/22 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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