| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress heat disturbance of a phase change memory having a three-dimensional structure. <P>SOLUTION: In the phase change memory having a three-dimensional structure, a material having a high heat conductivity is used as the gate insulating film of an MOS transistor for selection, and the heat transmitted from a phase change recording film to an Si channel layer is diffused well to a gate electrode. Consequently, the heat generated from a recording bit is diffused to an adjacent bit of non-selection thus suppressing heat disturbance of erasing the data of an adjacent bit. The gate insulating film having a high heat conductivity includes BN, Al<SB POS="POST">2</SB>O<SB POS="POST">3</SB>, AlN, TiO<SB POS="POST">2</SB>, Si<SB POS="POST">3</SB>N<SB POS="POST">4</SB>, ZnO, and the like. <P>COPYRIGHT: (C)2013,JPO&INPIT |
