| 摘要 |
Various embodiments include methods and apparatuses including strings of memory cells formed along levels of semiconductor material. One such apparatus includes a stack comprised of a number of levels of single crystal silicon and a number of levels of dielectric material. Each of the levels of silicon is separated from an adjacent level of silicon by a level of the dielectric material. Strings of memory cells are formed along the levels of silicon. Additional apparatuses and methods are disclosed.
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