发明名称 |
Carrier mobility in surface-channel transistors, apparatus made therewith, and systems containing same |
摘要 |
A surface channel transistor is provided in a semiconductive device. The surface channel transistor is either a PMOS or an NMOS device. Epitaxial layers are disposed above the surface channel transistor to cause an increased bandgap phenomenon nearer the surface of the device. A process of forming the surface channel transistor includes grading the epitaxial layers.
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申请公布号 |
US8384128(B2) |
申请公布日期 |
2013.02.26 |
申请号 |
US20090454354 |
申请日期 |
2009.05.15 |
申请人 |
INTEL CORPORATION;PILLARISETTY RAVI;UUDAIT MANTU;RADOSAVLJEVIC MARKO;DEWEY GILBERT;KAVALIEROS JACK T. |
发明人 |
PILLARISETTY RAVI;UUDAIT MANTU;RADOSAVLJEVIC MARKO;DEWEY GILBERT;KAVALIEROS JACK T. |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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