| 摘要 |
PURPOSE: To improve light lead-out efficiency by restraining the LED light generated inside an element from being reflected by the element surface. CONSTITUTION: The surface of an n-type GaAs substrate 1 is made uneven. By crystal-growing in order an n-type lower clad layer 2, an active layer 3, and a p-type upper clad layer 4 on the substrate surface, a light emitting part 100a is arranged on the substrate 1. The surface form of each of the semiconductor layers 2-4 constituting the light emitting part 100a is made uneven, correspondingly to the uneven surface of the substrate. |
