发明名称 |
MANUFACTURING METHOD OF GROUP III NITRIDE CRYSTAL SUBSTRATE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a group III nitride crystal substrate capable of manufacturing a group III nitride crystal substrate that is large with small warpage and surface roughness, with high efficiency and high yield, by using a resin fixed abrasive-grain wire. <P>SOLUTION: A manufacturing method of a group III nitride crystal substrate includes a step S1 of preparing a group III nitride crystal and a step S2 of manufacturing a group III nitride crystal substrate by slicing the group III nitride crystal by using a resin fixed abrasive-grain wire. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013038116(A) |
申请公布日期 |
2013.02.21 |
申请号 |
JP20110170706 |
申请日期 |
2011.08.04 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
MIKAMI HIDENORI;MATSUMOTO NAOKI |
分类号 |
H01L21/304;B24B27/06;B28D5/04;C30B29/38;C30B33/00 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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