发明名称 MANUFACTURING METHOD OF GROUP III NITRIDE CRYSTAL SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a group III nitride crystal substrate capable of manufacturing a group III nitride crystal substrate that is large with small warpage and surface roughness, with high efficiency and high yield, by using a resin fixed abrasive-grain wire. <P>SOLUTION: A manufacturing method of a group III nitride crystal substrate includes a step S1 of preparing a group III nitride crystal and a step S2 of manufacturing a group III nitride crystal substrate by slicing the group III nitride crystal by using a resin fixed abrasive-grain wire. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013038116(A) 申请公布日期 2013.02.21
申请号 JP20110170706 申请日期 2011.08.04
申请人 SUMITOMO ELECTRIC IND LTD 发明人 MIKAMI HIDENORI;MATSUMOTO NAOKI
分类号 H01L21/304;B24B27/06;B28D5/04;C30B29/38;C30B33/00 主分类号 H01L21/304
代理机构 代理人
主权项
地址