| 摘要 |
PURPOSE: A dual gate flash memory is provided to prevent the degradation of a cell and a read and program disturbance by supplying a pin structure between a memory gate stack and a selection gate to separate a read operation from program and erase operations. CONSTITUTION: A memory gate stack(209) includes a control gate(223), a dielectric layer(225), a floating gate(227), and a second tunneling oxide layer(229). Source and drain regions are opposite to a pin structure(207). A first channel region(215) functions as a program and erase channel. A second channel region(217) functions as a read channel and is isolated from degradation for program and erase operations. |
