| 摘要 |
A method of fabricating a sensor device from a substrate comprising a plurality of transistor components (4, 6), a dielectric layer (10) isolating the transistor components, a plurality of contact electrodes (12, 14) of a first conductive material, and at least one gate electrode (24) arranged on the dielectric layer is disclosed. The method comprises forming a trench in the substrate to expose the gate electrode (24), forming a seed layer of a semiconductor material in the trench, forming a plurality of elongate wires (30) of the semiconductor material on and extending from the seed layer, and forming a layer (32) of a second conductive material, at ends of the elongate wires in the trench. |
