| 摘要 |
<p>This gate drive circuit (11) includes a P-type field effect transistor (12), an N-type field effect transistor (13), and a diode (14, 15), and the diode is so formed as to shift a voltage applied to at least either a gate of the P-type field effect transistor or a gate of the N-type field effect transistor to a side of a threshold voltage of the gate.</p> |
