| 摘要 |
THE PRESENT INVENTION PROVIDES A CHEMICAL-MECHANICAL POLISHING (CMP) COMPOSITION SUITABLE FOR POLISHING A SUBSTRATE COMPRISING A PHASE CHANGE ALLOY (PCA), SUCH AS A GERMANIUM-ANTIMONY-TELLURIUM (GST) ALLOY. THE COMPOSITION COMPRISES NOT MORE THAN 6 PERCENT BY WEIGHT OF A PARTICULATE ABRASIVE MATERIAL IN COMBINATION WITH AN OPTIONAL OXIDIZING AGENT, AT LEAST ONE CHELATING AGENT, AND AN AQUEOUS CARRIER THEREFOR. THE CHELATING AGENT COMPRISES A COMPOUND OR COMBINATION OF COMPOUNDS CAPABLE OF CHELATING A PHASE CHANGE ALLOY OR COMPONENT THEREOF (E.G., GERMANIUM, INDIUM, ANTIMONY AND/OR TELLURIUM SPECIES) THAT IS PRESENT IN THE SUBSTRATE, OR CHELATING A SUBSTANCE THAT IS FORMED FROM THE PCA DURING POLISHING OF THE SUBSTRATE WITH THE CMP COMPOSITION. A CMP METHOD FOR POLISHING A PHASE CHANGE ALLOY-CONTAINING SUBSTRATE UTILIZING THE COMPOSITION IS ALSO DISCLOSED. |
