发明名称 POWER SEMICONDUCTOR MODULE HAVING LAYERED INSULATING SIDE WALLS
摘要 <p>A power semiconductor module includes at least two interconnected power semiconductor units having actuatable power semiconductors, a module housing in which the power semiconductor units are disposed and which has an electrically insulating side wall, and at least one connection bus extended through the side wall and connected to at least one of the power semiconductor units. High explosion resistance and particularly inexpensive production are provided by forming the insulating side wall as a stack of insulating and partial elements constructed as a single piece, in which contact areas of the partial elements contact each other.</p>
申请公布号 EP2407015(B8) 申请公布日期 2013.02.13
申请号 EP20090776457 申请日期 2009.03.13
申请人 SIEMENS AKTIENGESELLSCHAFT;FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. 发明人 BILLMANN, MARKUS;BLOESCH, CHRISTOPH;MALIPAARD, DIRK;ZENKNER, ANDREAS
分类号 H05K7/14;H01L23/00;H01L23/10;H01L25/07;H05K7/20 主分类号 H05K7/14
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