发明名称 SILICON CARBIDE SEMICONDUCTOR DEVICE
摘要 First, second, fourth, and fifth impurity regions have a first conductivity type, and a third impurity region has a second conductivity type. The first to third impurity regions reach a first layer having the first conductivity type. The fourth and fifth impurity regions are provided on a second layer. First to fifth electrodes are provided on the first to fifth impurity regions, respectively. Electrical connection is established between the first and fifth electrodes, and between the third and fourth electrodes. A sixth electrode is provided on a gate insulating film covering a portion between the fourth and fifth impurity regions.
申请公布号 US2013032824(A1) 申请公布日期 2013.02.07
申请号 US201213565388 申请日期 2012.08.02
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD.;HAYASHI HIDEKI 发明人 HAYASHI HIDEKI
分类号 H01L29/16 主分类号 H01L29/16
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