<p>The present invention uses an isopotential source layer for an electronic device, wherein the source layer provides ions of charge to be preferentially injected into an active layer of the electronic device, such that a charge of the injected ions has the same sign as the sign of a relative bias applied to the isopotential source layer. The source layer may comprise a composite ionic dopant injection layer having at least one component that has a relatively high diffusivity for ions. The composite ionic dopant injection layer may comprise metallic conductive particles and an ion supporting matrix. The composite ionic dopant injection layer may also comprise a continuous metallic conductive network and an ion supporting matrix. The metallic network comprises metallic nanowires or conductive nanotubes. The ion supporting matrix may comprise a conductive polymer.</p>
申请公布号
WO2013019993(A1)
申请公布日期
2013.02.07
申请号
WO2012US49397
申请日期
2012.08.02
申请人
SUMITOMO CHEMICAL CO., LTD.;MACKENZIE, JOHN, DEVIN;JONES, ERIC;NAKAZAWA, YUKO