发明名称 SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR SAME
摘要 [Problem] To provide a semiconductor device having an electrical insulating layer with excellent heat resistance, heat dissipation characteristics, and durability and that can also be fabricated with a process that is highly efficient and has excellent cost characteristics. [Solution] A semiconductor device provided with the following: a first substrate to which a semiconductor chip is mounted directly or indirectly, and a white colored insulating layer that is formed on the first substrate and functions as a reflecting material, wherein the semiconductor chip is an LED, at least the surface of the first substrate is made of metal, and a laminated structure comprising a white colored insulating layer and a metal layer is formed on the surface of the first substrate by applying a liquid material containing SiO2 in the form of nanoparticles and a white inorganic pigment and then firing the liquid material. Preferably, the ratio of SiO2 and white inorganic pigment contained in the aforementioned white insulating layer after firing is 80% by weight or greater.
申请公布号 WO2013018783(A1) 申请公布日期 2013.02.07
申请号 WO2012JP69390 申请日期 2012.07.31
申请人 STEQ INC.;SSTECHNO, INC.;SHIKOKU INSTRUMENTATION CO., LTD.;ISHIHARA, MASAMICHI;OYAMA, KENSHU;MURAKAMI, SHOJI;ONOSAKA, HITONOBU 发明人 ISHIHARA, MASAMICHI;OYAMA, KENSHU;MURAKAMI, SHOJI;ONOSAKA, HITONOBU
分类号 H01L33/60;H01L23/12;H01L33/62 主分类号 H01L33/60
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