发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR SAME |
摘要 |
[Problem] To provide a semiconductor device having an electrical insulating layer with excellent heat resistance, heat dissipation characteristics, and durability and that can also be fabricated with a process that is highly efficient and has excellent cost characteristics. [Solution] A semiconductor device provided with the following: a first substrate to which a semiconductor chip is mounted directly or indirectly, and a white colored insulating layer that is formed on the first substrate and functions as a reflecting material, wherein the semiconductor chip is an LED, at least the surface of the first substrate is made of metal, and a laminated structure comprising a white colored insulating layer and a metal layer is formed on the surface of the first substrate by applying a liquid material containing SiO2 in the form of nanoparticles and a white inorganic pigment and then firing the liquid material. Preferably, the ratio of SiO2 and white inorganic pigment contained in the aforementioned white insulating layer after firing is 80% by weight or greater. |
申请公布号 |
WO2013018783(A1) |
申请公布日期 |
2013.02.07 |
申请号 |
WO2012JP69390 |
申请日期 |
2012.07.31 |
申请人 |
STEQ INC.;SSTECHNO, INC.;SHIKOKU INSTRUMENTATION CO., LTD.;ISHIHARA, MASAMICHI;OYAMA, KENSHU;MURAKAMI, SHOJI;ONOSAKA, HITONOBU |
发明人 |
ISHIHARA, MASAMICHI;OYAMA, KENSHU;MURAKAMI, SHOJI;ONOSAKA, HITONOBU |
分类号 |
H01L33/60;H01L23/12;H01L33/62 |
主分类号 |
H01L33/60 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|