发明名称 METHOD OF FABRICATING SEMICONDUCTOR OPTICAL ELEMENT, AND SEMICONDUCTOR OPTICAL ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of fabricating a semiconductor optical element capable of reducing disturbance of a cleavage path in fabrication of the semiconductor optical element including a waveguide mesa. <P>SOLUTION: A semiconductor bar BAR1 and a substrate product SP1 respectively have cleavage planes CL1 and CL2 generated by a single cleavage operation. Transcription marks and residual marks are appeared to the cleavage plane CL1. This cleavage plane is formed while being guided by the transcription marks and the residual marks. Due to cleavage, a residual mark 35a is separated into a first hollow 51a and a second hollow 53a, and a residual mark 35b is separated into a first hollow 51b and a second hollow 53b. A transcription mark 37a is separated into a first hollow 55a and a second hollow 57a, and a transcription mark 37b is separated into a first hollow 55b and a second hollow 57b. The cleavage plane CL1 of the semiconductor bar BAR1 has the first hollows 51a and 51b derived from the residual marks and the first hollows 55a and 55b derived from the transcription marks. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013026517(A) 申请公布日期 2013.02.04
申请号 JP20110161233 申请日期 2011.07.22
申请人 SUMITOMO ELECTRIC IND LTD 发明人 HIRATSUKA KENJI
分类号 H01S5/10;H01L21/3065 主分类号 H01S5/10
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