| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a deposition apparatus and a deposition method which prevent a semiconductor wafer from being etched when depositing a tungsten film. <P>SOLUTION: The deposition apparatus comprises a stage on which a semiconductor wafer is mounted, and an edge cut placed to cover the peripheral edge of the semiconductor wafer being mounted on the stage, and a tungsten film is deposited on the semiconductor wafer. The edge cut includes a first edge cut provided so as to come into contact with the peripheral edge of the semiconductor wafer, a connection connected with the first edge cut and movable vertically in a direction substantially perpendicular to the semiconductor wafer, and a second edge cut connected with the connection and placed to abut against the inner side surface of the semiconductor wafer by vertical motion of the connection. <P>COPYRIGHT: (C)2013,JPO&INPIT |
