发明名称 PIEZOELECTRIC FILM AND MANUFACTURING METHOD THEREOF, PIEZOELECTRIC FILM ELEMENT AND MANUFACTURING METHOD THEREOF AND PIEZOELECTRIC FILM DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To form a piezoelectric film which has few oxygen defects and excels in piezoelectric characteristics. <P>SOLUTION: A piezoelectric film consists of an alkali niobium oxide of a perovskite structure expressed by a general formula (Na<SB POS="POST">x</SB>K<SB POS="POST">y</SB>Li<SB POS="POST">z</SB>)NbO<SB POS="POST">3</SB>(where, 0&le;x&le;1, 0&le;y&le;1, 0&le;z&le;0.2, x+y+z=1). In the piezoelectric film, the alkali niobium oxide has a pseudo-cubic, tetragonal, orthorhombic, monoclinic or rhombohedral crystal or a coexisting crystal structure thereof, and when the sum of a K-O bond and a K-Metal bond in the bonding state around K atoms of the alkali niobium oxide is assumed to be 100%, the ratio of the K-O bond is 46.5% or more and the ratio of the K-Metal bond is 53.5% or less. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013026246(A) 申请公布日期 2013.02.04
申请号 JP20110156212 申请日期 2011.07.15
申请人 HITACHI CABLE LTD 发明人 SUENAGA KAZUFUMI;SHIBATA KENJI;WATANABE KAZUTOSHI;NOMOTO AKIRA;HORIKIRI FUMIMASA
分类号 H01L41/09;B41J2/045;B41J2/055;B41J2/16;C23C14/08;H01L41/08;H01L41/18;H01L41/187;H01L41/22 主分类号 H01L41/09
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