FIELD EFFECT TRANSISTOR USING GRAPHEME OXIDE THIN FILM AND THE MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A field effect transistor using a grapheme oxide thin film and a manufacturing method thereof are provided to reduce manufacturing costs by manufacturing a logic circuit using a printing method. CONSTITUTION: A graphene oxide layer(150) treated by a reduction process is formed on a substrate. A source electrode(130) and a drain electrode(140) are formed on the graphene oxide layer. A dielectric layer(120) is formed on the source electrode and the drain electrode. A gate electrode(110) is formed on the dielectric layer. The graphene oxide layer is used as a channel layer. [Reference numerals] (100) Substrate; (110) Gate electrode; (120) Dielectric layer; (130) Source electrode; (140) Drain electrode; (150) Graphene oxide layer