发明名称 |
High density memory device |
摘要 |
A memory device and a method of forming the same are provided. The memory device includes a substrate; a set of electrodes disposed on the substrate; a dielectric layer formed between the set of electrodes; and a transition metal oxide layer formed between the set of electrodes, the transition metal oxide layer configured to undergo a metal-insulator transition (MIT) to perform a read or write operation.
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申请公布号 |
US8362477(B2) |
申请公布日期 |
2013.01.29 |
申请号 |
US20100729856 |
申请日期 |
2010.03.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;BARWICZ TYMON;JENKINS KEITH A.;GUHA SUPRATIK |
发明人 |
BARWICZ TYMON;JENKINS KEITH A.;GUHA SUPRATIK |
分类号 |
H01L29/12 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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