发明名称 |
Method of fabricating semiconductor device |
摘要 |
A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a plurality of first conductive patterns in a insulation layer as closed curves, forming a plurality of mask patterns on the insulation layer, the mask patterns exposing end portions of each of the first conductive patterns, and forming a plurality of second conductive patterns in the insulation layer as lines by removing the end portions of each of the first conductive patterns.
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申请公布号 |
US8361849(B2) |
申请公布日期 |
2013.01.29 |
申请号 |
US201113183574 |
申请日期 |
2011.07.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;RYU YONG-HWAN;SEO JUN;KANG EUN-YOUNG;HWANG JAE-SEUNG;KWON SUNG-UN |
发明人 |
RYU YONG-HWAN;SEO JUN;KANG EUN-YOUNG;HWANG JAE-SEUNG;KWON SUNG-UN |
分类号 |
H01L21/338;H01L21/336 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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